http://www.wirelessdesignasia.comWireless Design Asia - Amplifiers en-USCopyright 2007 Reed Business Information, a division of Reed Elsevier Inc. All rights reserved.Thu, 8 Jan 2009 10:22:30 +0800http://www.wirelessdesignasia.com/article-9930-avagotechnologiesfifthgenerationcoolpampoweramplifiersdesignedforasianmobilecarriersnewtalktimerequi-Asia.htmlAvago Technologies has released two power amplifiers that are based on its fifth generation of CoolPAM technology and comply with the new talk time requirements defined by major Asian mobile carriers. ....http://www.wirelessdesignasia.com/article-9930-avagotechnologiesfifthgenerationcoolpampoweramplifiersdesignedforasianmobilecarriersnewtalktimerequi-Asia.htmlThu, 8 Jan 2009 00:00:00 +0800http://www.wirelessdesignasia.com/article-9863-fujitsureleasescmoslogicbasedhighvoltagetransistorforpoweramplifiers-Asia.htmlFujitsu Laboratories Ltd and Fujitsu Microelectronics Ltd have co-developed a CMOS logic process-based high-voltage transistor featuring high breakdown voltage, suitable for power amplifiers used in wireless ....http://www.wirelessdesignasia.com/article-9863-fujitsureleasescmoslogicbasedhighvoltagetransistorforpoweramplifiers-Asia.htmlMon, 29 Dec 2008 00:00:00 +0800http://www.wirelessdesignasia.com/article-9832-sigepoweramplifiertouts18dbmoutputpower-Asia.htmlSiGe Semiconductor Inc. has released SE2568U, an ISM band high-performance power amplifier (PA) targeted at the embedded 2.4GHz wireless LAN (WLAN) market. The device integrates direct to battery operation ....http://www.wirelessdesignasia.com/article-9832-sigepoweramplifiertouts18dbmoutputpower-Asia.htmlThu, 18 Dec 2008 00:00:00 +0800http://www.wirelessdesignasia.com/article-9815-broadbandprogrammablegainifamplifierfeatures48dbmoip3-Asia.htmlLinear Technology's LT5554, a broadband digitally programmable gain IF amplifier, features a 48dBm OIP3 (output 3rd order intercept) at 200MHz and has very low noise, enabling very high dynamic range ....http://www.wirelessdesignasia.com/article-9815-broadbandprogrammablegainifamplifierfeatures48dbmoip3-Asia.htmlWed, 17 Dec 2008 00:00:00 +0800http://www.wirelessdesignasia.com/article-9814-fujitsudevelopscmoslogicbasedhighvoltagetransistorforpoweramplifiers-Asia.htmlFujitsu Laboratories Ltd and Fujitsu Microelectronics Ltd have developed a CMOS logic process-based high-voltage transistor featuring high breakdown voltage, suitable for power amplifiers used in wireless ....http://www.wirelessdesignasia.com/article-9814-fujitsudevelopscmoslogicbasedhighvoltagetransistorforpoweramplifiers-Asia.htmlWed, 17 Dec 2008 00:00:00 +0800http://www.wirelessdesignasia.com/article-9734-classdaudioamplifiersenable50reductiononcaraudiosystemscost-Asia.htmlTexas Instruments Inc. (TI) has extended its TAS54xx family of highly-efficient Class-D audio amplifiers with two new devices, which offer greater integration and channel flexibility, saving OEMs up to ....http://www.wirelessdesignasia.com/article-9734-classdaudioamplifiersenable50reductiononcaraudiosystemscost-Asia.htmlWed, 3 Dec 2008 00:00:00 +0800http://www.wirelessdesignasia.com/article-9719-texasinstrumentssinglesupplyautozerosensoramplifierfeaturesprogrammablegainandoffset-Asia.htmlTexas Instruments Inc. (TI) has launched a single-supply, auto-zero bridge sensor amplifier that features programmable gain and offset. The PGA308 amplifies the sensor signal and provides digital calibration ....http://www.wirelessdesignasia.com/article-9719-texasinstrumentssinglesupplyautozerosensoramplifierfeaturesprogrammablegainandoffset-Asia.htmlMon, 1 Dec 2008 00:00:00 +0800http://www.wirelessdesignasia.com/article-9717-nxplaunchesldmostransistorforlbandradarapplications-Asia.htmlNXP Semiconductors has expanded its portfolio of RF power transistors with the release of its BLL6H1214-500 Laterally Diffused Metal Oxide Semiconductor (LDMOS) transistor for L-band radar applications, ....http://www.wirelessdesignasia.com/article-9717-nxplaunchesldmostransistorforlbandradarapplications-Asia.htmlMon, 1 Dec 2008 00:00:00 +0800http://www.wirelessdesignasia.com/article-9685-rfmdbroadens3gstandardproductportfoliowithhighlyintegratedwcdmahsdpapoweramplifiers-Asia.htmlRF Micro Devices Inc. has broadened its portfolio of 3G front ends for the open market with the release of two new highly integrated WCDMA/HSDPA power amplifiers (PAs)—the RF3267 and the RF6266, ....http://www.wirelessdesignasia.com/article-9685-rfmdbroadens3gstandardproductportfoliowithhighlyintegratedwcdmahsdpapoweramplifiers-Asia.htmlMon, 24 Nov 2008 00:00:00 +0800http://www.wirelessdesignasia.com/article-9674-isuppliestimateputsmobileg1bomcostat14389-Asia.htmlThe T-Mobile G1 smart phone, the first wireless handset to be based on Google Inc.'s Android mobile operating system, carries a Bill-of-Materials (BOM) cost of $143.89, according to a virtual teardown ....http://www.wirelessdesignasia.com/article-9674-isuppliestimateputsmobileg1bomcostat14389-Asia.htmlFri, 21 Nov 2008 00:00:00 +0800