NXP Launches LDMOS Transistor for L-band Radar Applications

(Product News, 1 Dec 2008)

NXP Semiconductors has expanded its portfolio of RF power transistors with the release of its BLL6H1214-500 Laterally Diffused Metal Oxide Semiconductor (LDMOS) transistor for L-band radar applications, which delivers breakthrough RF output power of 500W at frequencies between 1.2GHz and 1.4GHz.

NXP's LDMOS L-band RF power transistor sets new standards for efficiency, with a more than 50 percent drain efficiency, gain of 17dB, and ruggedness at 500W power level when compared to competing bipolar.

Other key specifications include overdrive without risk up to 5dB; improved pulse droop of 0.2dB; and rated voltage of 50V.

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