RFMD Broadens 3G Standard Product Portfolio with Highly Integrated WCDMA/HSDPA Power Amplifiers

(Product News, 24 Nov 2008)

RF Micro Devices Inc. has broadened its portfolio of 3G front ends for the open market with the release of two new highly integrated WCDMA/HSDPA power amplifiers (PAs)—the RF3267 and the RF6266, which are designed to support the critical needs of next-generation, multi-band, multimode 3G handsets and smartphones. RFMD anticipates volume shipments of the RF3267 and RF6266 to commence in the current quarter.

RFMD's RF3267 is a Band 1 (1.92GHz to 1.98GHz) WCDMA/HSDPA PA with a digitally controlled low-power mode, which allows operation up to 19dBm with reduced current consumption. The RF3267 features an integrated coupler, which allows handset designers to eliminate the external coupler traditionally placed at the output of the PA. The integration of additional functionality is achieved without growing the 3x3x0.9 mm package size, which was first introduced with the prior generation PA (the RF3266). By maintaining pin-for-pin compatibility with the highly successful prior generation PA, RFMD's RF3267 assists handset original equipment manufacturers (OEMs) seeking to shrink handset RF sections in support of more compact and thinner devices.

RFMD's RF6266 WCDMA/HSDPA PA combines a similar feature set to the RF3267 with a compact 3x3x0.9mm package and the ability to operate in either Band 5 (824MHz to 849MHz) or Band 8 (880MHz to 915MHz). Used in combination, the RF3267 and RF6266 provide a compact solution for multi-band, multimode 3G handset designs targeted for the North American or European Union (EU) markets.

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