IR Releases Trench HEXFET Power MOSFETs

(Product News, 30 Oct 2008)

International Rectifier (IR) has announced a range of trench HEXFET Power MOSFETs featuring benchmark low on-state resistance [RDS(on)] in a TO-247 package for synchronous rectification, active ORing and industrial applications including high power DC motors, DC to AC inverters and power tools. The MOSFETs feature an improvement of up to 50 percent in RDS (on) over competing devices, eliminating the need for large and expensive packages used in industrial applications, and cutting overall system cost.

Moreover, the low RDS (on) results in lower conduction losses and improved system efficiency. The family of N channel MOSFETs provide a voltage range from 40V to 200V. The devices are qualified to industrial grade and moisture sensitivity level 1 (MSL1). The new MOSFETs are offered lead free and are RoHS compliant.

Click here for more information on IR's Automotive Trench HEXFET Power MOSFETs

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