Power MOSFETs Feature 52mΩ On-Resistance

(Product News, 25 Aug 2008)

Vishay Intertechnology Inc. today released a family of p-channel power MOSFETs in the PowerPAK SC-75, including several devices rated from 8V to 30V that are industry-firsts for their voltage ratings in this package type.

Among the devices being released today are the industry's first -12V (SiB419DK), and -30V (SiB415DK) single p-channel power MOSFETs in the PowerPAK SC-75 package. The previously announced SiB417DK is the first -8V device and is joined today by an ESD-protected version with the same -8V rating, the SiB417EDK. Both of these 8V devices include on-resistance specifications down to VGS=1.2V, potentially allowing designers to reduce space requirements, power consumption, and solution cost by eliminating the need for level-shift circuitry. The new products also include two -20V devices, the single SiB411DK and dual SiB911DK. On-resistance for the single devices at a 4.5V gate drive ranges from 52mΩ to 66mΩ.

The Vishay Siliconix PowerPAK SC-75 power MOSFETs measure 1.6x1.6x0.75mm—the same area dimensions as the standard SC-75—but offer much lower on-resistance. The PowerPAK SC-75 is 100 percent lead-free, halogen-free, and RoHS-compliant, meeting the demands of international legislation for elimination of hazardous substances.

The new PowerPAK SC-75 devices offer a new miniaturized package option to designers who are looking for ways to save space and reduce power consumption in portable electronic systems that are continually increasing in functionality. To meet consumer expectations for battery run times between charges, designers require smaller MOSFET packages with low power consumption, and this is just what the new PowerPAK SC-75 devices provide.

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