Fast-recovery MOSFETs Allow Designers to Increase Power Density

( 1 Jul 2008 )

STMicroelectronics' new family of fast-recovery MOSFETs combine enhanced switching performance with on-resistance improved by more than 18 percent over existing devices to meet the needs of efficiency-focused applications, including renewable-energy controllers. The first device in the new Super-Junction FDmesh II family—the STW55NM60ND—is a 600V N-channel MOSFET offering an on-resistance of 60m¦¸ in a standard TO-247 package.

The device has a peak drain current of 51A, allowing one MOSFET to replace multiple components in converters for space-constrained applications such as telecom and server systems. Combined with savings in thermal management due to reduced losses, this allows designers to significantly increase power density. The devices also have high dv/dt rating for higher reliability during switching, particularly in bridge-type topologies including Zero Voltage Switching (ZVS) under light-load conditions.

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