High-current MOSFET Gate Drivers Feature Improved Switching Efficiency

(Product News, 26 May 2008)

Intersil Corp.'s ISL6615 and ISL6615A high-frequency 6A sink synchronous MOSFET gate drivers provide greater efficiency, dramatic flexibility and added protection features for system safety. The devices have increased gate drive currents (4A source and sink gate drive currents for UGATE and 4A source with 6A sink on LGATE) to reduce gate voltage rise and fall times—minimizing switching losses and improving efficiency, especially in high current applications in which power MOSFETs are placed in parallel per phase.

The ISL6615 and ISL6615A also support both 9.6V and 12V input rails. In addition, designers can choose versions of the device which support 3.3 PWM signals (ISL6615) or 5V PWM signals (ISL6615A). Each device has a wide input voltage operating range of 5V to 12V and each is pin-for-pin compatible with Intersil's previous generation ISL6594D.

With multiple protection features like bootstrap capacitor overcharging prevention, a tri-state PWM input for safe output stage shutdown, pre-POR overvoltage protection and VCC undervoltage protection, the ISL6615 and ISL6615A help protect the system. This attention to system safety, combined with improved flexibility and greater gate drive efficiency allows designers to remain consistent in board design, while creating improvements and avoiding the use of expensive, low RDS(ON) MOSFETS.

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