NXP's LDMOS Base Station Transistor Delivers Breakthrough Power Efficiency

(Product News, 22 May 2008)

NXP Semiconductors has launched the BLC7G22L(S)-130 base station power transistor—the first of its products to feature NXP's Gen7 LDMOS technology—optimized for high power use and Doherty amplifier applications. Featuring the seventh generation Laterally Diffused Metal Oxide Semiconductor (LDMOS) technology from NXP, the device enables the highest-efficiency LDMOS solutions available today, increasing power density by 20 percent and improving power efficiency by two percent, while reducing the thermal resistance (Rth) by over 25 percent compared to the previous generation. First prototypes of the NXP Gen7 LDMOS base station power transistor will be demonstrated at the IEEE MTT-S International Microwave Symposium 2008 on 15 to 20 June, 2008, in Atlanta, Georgia.

The Gen7 LDMOS delivers record performance up to 3.8GHz, and offers 25 percent lower output capacitance, enabling wideband output matching and leading to simplified, better performing Doherty amplifier designs. Doherty has emerged as the amplifier architecture of choice for new base station transmitters, helping wireless network operators to increase efficiency and reduce operating costs.

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