Freescale Launches 450W RF Power Transistor for UHF Broadcast Applications

(Product News, 21 Apr 2008)

Freescale Semiconductor has introduced MRF6VP3450H—a 50V laterally diffused MOS (LDMOS) RF power transistor designed to deliver 50 percent higher output power than competing UHF TV broadcast solutions. The device delivers more than 450W peak power at P1dB with 50 percent efficiency throughout the UHF broadcast frequency band.

The MRF6VP3450H is designed to offer the best combination of power, efficiency and gain of any RF power transistor designed for 470MHz to 860MHz TV broadcast operation. Using a DVB-T 64 QAM OFDM signal at 90W average output power, the typical 860MHz 50V performance is 28 percent drain efficiency and 23dB gain, with an adjacent channel power ratio (ACPR) at 4MHz offset of -62dBc in a 4kHz bandwidth.

In addition, the MRF6VP3450H device can help ease the transition from analog to digital TV broadcast. The global broadcast industry is moving rapidly to digital modulation from the analog modulation schemes that have been employed for more than 70 years. After February 2009, digital broadcasting will replace all analog modulation schemes in the United States, and broadcasters worldwide will soon be "fully digital". This conversion to digital broadcasting places significant demands on a transmitter's power amplifier and RF power transistors because the signals have very high peak-to-average ratios. As a result, RF power transistors used for the conversion must exhibit extremely high linearity under a wide range of operating conditions, as well as high efficiency and ruggedness to ensure long operating life.

The MRF6VP3450H is based on Freescale's sixth-generation, high-voltage (VHV6) 50V LDMOS process technology. It is extremely rugged and is designed to handle very high impedance mismatches without damage. The device also incorporates protection against electrostatic discharge (ESD), which makes it less susceptible to damage during handling and manufacturing.

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