Infineon's Latest LDMOS RF Power Transistors Targeted at WiMAX, Wireless Broadband Applications

(Product News, 7 Apr 2008)

Infineon Technologies AG has launched two new LDMOS RF power transistors targeted at wireless infrastructure applications, such as WiMAX, in the 2.5GHz to 2.7GHz frequency band. Providing peak output power of up to 170W, the devices extend Infineon's broad portfolio of RF power transistors for WiMAX applications, which currently includes 10W, 45W and 130W models. The high peak power performance of the new LDMOS RF power transistors will enable designers to simplify their RF power amplifier designs.

The PTFA260851E/F 85W FET features 14dB gain (typical) and 22 percent efficiency (typical) at 16W average output power, under WiMAX signal conditions. The PTFA261702E 170W FET features 15dB gain (typical) and 20 percent efficiency at 32W average output power, under WiMAX signal conditions.

Infineon's PTFA261702E is rated at 170W (P-1 dB), the industry's highest peak output power in the 2.5GHz to 2.7GHz band. The transistor's architecture provides electrically isolated halves that ease use in Doherty power amplifier applications. The device can also be used in a push-pull configuration for extended bandwidth performance.

Both products are available in lead-free, RoHS-compliant ceramic packages. Operating at 28V, these transistors provide broadband internal matching, and are capable of handling a 10:1 VSWR (voltage standing wave ratio) at CW (continuous wave) power output and 28V supply voltage.

Click here for more information on the RF LDMOS FETs

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