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Amplifiers
   

Fujitsu Releases CMOS Logic-based High-voltage Transistor for Power Amplifiers

(Product News, 29 Dec 2008 )

Fujitsu Laboratories Ltd and Fujitsu Microelectronics Ltd have co-developed a CMOS logic process-based high-voltage transistor featuring high breakdown voltage, suitable for power amplifiers used in wireless ....

   

SiGe Power Amplifier Touts 18dBm Output Power

(Product News, 18 Dec 2008 )

SiGe Semiconductor Inc. has released SE2568U, an ISM band high-performance power amplifier (PA) targeted at the embedded 2.4GHz wireless LAN (WLAN) market. The device integrates direct to battery operation ....

   

Broadband Programmable Gain IF Amplifier Features 48dBm OIP3

(Product News, 17 Dec 2008 )

Linear Technology's LT5554, a broadband digitally programmable gain IF amplifier, features a 48dBm OIP3 (output 3rd order intercept) at 200MHz and has very low noise, enabling very high dynamic range ....

   

Fujitsu Develops CMOS Logic-based High-voltage Transistor for Power Amplifiers

(Business News & Technology News, 17 Dec 2008 )

Fujitsu Laboratories Ltd and Fujitsu Microelectronics Ltd have developed a CMOS logic process-based high-voltage transistor featuring high breakdown voltage, suitable for power amplifiers used in wireless ....

   

Class-D Audio Amplifiers Enable 50% Reduction on Car Audio Systems Cost

(Product News, 03 Dec 2008 )

Texas Instruments Inc. (TI) has extended its TAS54xx family of highly-efficient Class-D audio amplifiers with two new devices, which offer greater integration and channel flexibility, saving OEMs up to ....

   

Texas Instruments' Single-supply Auto-zero Sensor Amplifier Features Programmable Gain and Offset

(Product News, 01 Dec 2008 )

Texas Instruments Inc. (TI) has launched a single-supply, auto-zero bridge sensor amplifier that features programmable gain and offset. The PGA308 amplifies the sensor signal and provides digital calibration ....

   

NXP Launches LDMOS Transistor for L-band Radar Applications

(Product News, 01 Dec 2008 )

NXP Semiconductors has expanded its portfolio of RF power transistors with the release of its BLL6H1214-500 Laterally Diffused Metal Oxide Semiconductor (LDMOS) transistor for L-band radar applications, ....

   

RFMD Broadens 3G Standard Product Portfolio with Highly Integrated WCDMA/HSDPA Power Amplifiers

(Product News, 24 Nov 2008 )

RF Micro Devices Inc. has broadened its portfolio of 3G front ends for the open market with the release of two new highly integrated WCDMA/HSDPA power amplifiers (PAs)—the RF3267 and the RF6266, ....

   

iSuppli Estimate Puts Mobile G1 BOM Cost at $143.89

(Business News & Technology News, 21 Nov 2008 )

The T-Mobile G1 smart phone, the first wireless handset to be based on Google Inc.'s Android mobile operating system, carries a Bill-of-Materials (BOM) cost of $143.89, according to a virtual teardown ....

   
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