http://www.wirelessdesignasia.comWireless Design Asia - Amplifiers en-USCopyright 2007 Reed Business Information, a division of Reed Elsevier Inc. All rights reserved.Tue, 6 Jan 2009 08:35:34 +0800http://www.wirelessdesignasia.com/article-9863-fujitsureleasescmoslogicbasedhighvoltagetransistorforpoweramplifiers-Asia.htmlFujitsu Laboratories Ltd and Fujitsu Microelectronics Ltd have co-developed a CMOS logic process-based high-voltage transistor featuring high breakdown voltage, suitable for power amplifiers used in wireless ....http://www.wirelessdesignasia.com/article-9863-fujitsureleasescmoslogicbasedhighvoltagetransistorforpoweramplifiers-Asia.htmlMon, 29 Dec 2008 00:00:00 +0800http://www.wirelessdesignasia.com/article-9832-sigepoweramplifiertouts18dbmoutputpower-Asia.htmlSiGe Semiconductor Inc. has released SE2568U, an ISM band high-performance power amplifier (PA) targeted at the embedded 2.4GHz wireless LAN (WLAN) market. The device integrates direct to battery operation ....http://www.wirelessdesignasia.com/article-9832-sigepoweramplifiertouts18dbmoutputpower-Asia.htmlThu, 18 Dec 2008 00:00:00 +0800http://www.wirelessdesignasia.com/article-9815-broadbandprogrammablegainifamplifierfeatures48dbmoip3-Asia.htmlLinear Technology's LT5554, a broadband digitally programmable gain IF amplifier, features a 48dBm OIP3 (output 3rd order intercept) at 200MHz and has very low noise, enabling very high dynamic range ....http://www.wirelessdesignasia.com/article-9815-broadbandprogrammablegainifamplifierfeatures48dbmoip3-Asia.htmlWed, 17 Dec 2008 00:00:00 +0800http://www.wirelessdesignasia.com/article-9814-fujitsudevelopscmoslogicbasedhighvoltagetransistorforpoweramplifiers-Asia.htmlFujitsu Laboratories Ltd and Fujitsu Microelectronics Ltd have developed a CMOS logic process-based high-voltage transistor featuring high breakdown voltage, suitable for power amplifiers used in wireless ....http://www.wirelessdesignasia.com/article-9814-fujitsudevelopscmoslogicbasedhighvoltagetransistorforpoweramplifiers-Asia.htmlWed, 17 Dec 2008 00:00:00 +0800http://www.wirelessdesignasia.com/article-9734-classdaudioamplifiersenable50reductiononcaraudiosystemscost-Asia.htmlTexas Instruments Inc. (TI) has extended its TAS54xx family of highly-efficient Class-D audio amplifiers with two new devices, which offer greater integration and channel flexibility, saving OEMs up to ....http://www.wirelessdesignasia.com/article-9734-classdaudioamplifiersenable50reductiononcaraudiosystemscost-Asia.htmlWed, 3 Dec 2008 00:00:00 +0800http://www.wirelessdesignasia.com/article-9719-texasinstrumentssinglesupplyautozerosensoramplifierfeaturesprogrammablegainandoffset-Asia.htmlTexas Instruments Inc. (TI) has launched a single-supply, auto-zero bridge sensor amplifier that features programmable gain and offset. The PGA308 amplifies the sensor signal and provides digital calibration ....http://www.wirelessdesignasia.com/article-9719-texasinstrumentssinglesupplyautozerosensoramplifierfeaturesprogrammablegainandoffset-Asia.htmlMon, 1 Dec 2008 00:00:00 +0800http://www.wirelessdesignasia.com/article-9717-nxplaunchesldmostransistorforlbandradarapplications-Asia.htmlNXP Semiconductors has expanded its portfolio of RF power transistors with the release of its BLL6H1214-500 Laterally Diffused Metal Oxide Semiconductor (LDMOS) transistor for L-band radar applications, ....http://www.wirelessdesignasia.com/article-9717-nxplaunchesldmostransistorforlbandradarapplications-Asia.htmlMon, 1 Dec 2008 00:00:00 +0800http://www.wirelessdesignasia.com/article-9685-rfmdbroadens3gstandardproductportfoliowithhighlyintegratedwcdmahsdpapoweramplifiers-Asia.htmlRF Micro Devices Inc. has broadened its portfolio of 3G front ends for the open market with the release of two new highly integrated WCDMA/HSDPA power amplifiers (PAs)—the RF3267 and the RF6266, ....http://www.wirelessdesignasia.com/article-9685-rfmdbroadens3gstandardproductportfoliowithhighlyintegratedwcdmahsdpapoweramplifiers-Asia.htmlMon, 24 Nov 2008 00:00:00 +0800http://www.wirelessdesignasia.com/article-9674-isuppliestimateputsmobileg1bomcostat14389-Asia.htmlThe T-Mobile G1 smart phone, the first wireless handset to be based on Google Inc.'s Android mobile operating system, carries a Bill-of-Materials (BOM) cost of $143.89, according to a virtual teardown ....http://www.wirelessdesignasia.com/article-9674-isuppliestimateputsmobileg1bomcostat14389-Asia.htmlFri, 21 Nov 2008 00:00:00 +0800http://www.wirelessdesignasia.com/article-9677-totalavailablemarketformicrowavetubesapproaching1b-Asia.htmlWhile microwave and millimeter wave high-power vacuum electron devices (VEDs) remain "below the radar" of many industry observers, the total available market (TAM) for this segment is nearly $1 billion. ....http://www.wirelessdesignasia.com/article-9677-totalavailablemarketformicrowavetubesapproaching1b-Asia.htmlThu, 20 Nov 2008 00:00:00 +0800