NXP Introduces Silicon Based Solution for Mobile Trends

(Product News, 9 Nov 2007)

NXP Semiconductors has released the BFU725F microwave NPN transistor, which features an impressive blend of high switching frequency, high-gain and low noise solution for a variety of RF applications. The low noise figure improves the reception of the sensitive RF receivers found in various wireless devices, such as GPS systems, DECT phones, satellite radio, WLAN, and CDMA applications, while the high cut-off frequency is suited to meet the needs of applications that operate in the 10GHz to 30GHz range, such as satellite low noise blocks.

Developed to address both the performance needs of devices and the cost concerns of producers, the BFU725F transistor was developed using NXP's proven silicon germanium carbon (SiGeC) process technology for discrete components, the same process used to develop monolithic ICs and wideband transistors. Other solutions already on the market include the TFF1004HN, a highly integrated IC for satellite LNBs and the BFU725F microwave transistor.

NXP is developing several more silicon-based wideband transistors and MMICs due out later this year and in early 2008. The BFU725F is RoHS compliant and permits low noise of 0.43dB at 1.8GHz and 0.7dB at 5.8GHz; and high maximum stable gain of 27dB at 1.8GHz and 10dB at 18GHz.

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