Microsemi Launches Integrated Multichip Power Amplifier for 802.11b/g/n WLAN Front-End Applications

(Product News, 28 Sep 2007)

Microsemi Corp. has developed a space-saving multichip power amplifier for space constrained 2.4GHz WLAN front-end applications. The LX5540 combines an advanced two-stage HBT power amplifier with a fully matched low noise amplifier in an ultra low profile package measuring 0.45x3x3mm. Its small integrated packaging saves board space and reduces component count for small form factor, low profile wireless LAN designs targeting mobile applications.

The fully matched LNA requires no external matching components. The power amplifier stage includes output pre-matching and active bias circuits. It is ideally suited for 802.11b/g/n applications operating from a low 3.3V supply. The LX5540 combines a two-stage monolithic microwave integrated circuit (MMIC) power amplifier, manufactured in an advanced InGaP HBT process and a new InGaAs E-pHEMT (enhancement mode pseudomorphic HEMT) low noise amplifier. It operates from a single 3.3V single polarity power supply and features active bias and on-chip RF decoupling.

The LX5540 has a power gain of up to 28dB between 2.3GHz and 2.5GHz with a low quiescent current of 80mA. Its error vector magnitude (EVM) is a low 3% across the 2.3GHz to 2.5GHz frequency range at 20dBM OFDM output power and at 145mA total DC current input. The LNA provides 14dB gain and a 1.5dB noise figure.

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