RFMD Announces Design Wins for Wireless Infrastructure Products

(Product News, 7 Jun 2007)

RF Micro Devices Inc. has announced the availability of the RF386X family of gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) low-noise amplifiers (LNAs), which offer capabilities from 700MHz to 3.8GHz and provide low noise and high linearity performance. The new broadband LNAs are ideally suited for wireless networks, including cellular, WLAN and WiMAX infrastructure.

The RF386X family of LNAs is designed for first stage low noise and linear driver amplification targeting CDMA, PCS, DCS, UMTS, WLAN and WiMAX applications. The LNAs are offered in a variety of configurations¡ªsingle stage, dual stage and dual channel, and each LNA is internally matched, giving network designers maximum flexibility with minimal external biasing, thereby simplifying design requirements and accelerating time-to-market. Each RF386X LNA is contained in a low-cost, industry-standard QFN package.

RFMD is showcasing its industry-leading product portfolio of cellular front end solutions and wireless infrastructure products at the IEEE MTT-S International Microwave Symposium 2007, June 5-7, at the Honolulu Convention Center in Honolulu, Hawaii.

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