New GaN HEMTs from Cree Increase Power and Efficiency in WiMAX Applications

(Product News, 6 Jun 2007)

Cree Inc. has announced sample availability of three new devices especially designed for WiMAX applications. The CGH27120, CGH27060 and CGH27030 offer linear power up to 16W under OFDM modulation in small-footprint packages. Cree will showcase the devices at the IEEE MTT-S International Microwave Symposium 2007 being held June 3-8 in Honolulu, Hawaii.

"Our GaN HEMT WiMAX devices used in conjunction with our patented amplifier reference designs offer a foundation for new levels of system efficiency. The combination can enable new system architectures, such as remote radio heads and distributed base stations, either of which can significantly reduce mobile network capital and operational costs," explains Jim Milligan, Cree business area manager for RF products.

In their booth, Cree will also demonstrate an amplifier using its GaN HEMT transistors to produce more than 30W of average power with greater than 45-percent drain efficiency from 2.3GHz to 2.7GHz. This represents a 125-percent increase in efficiency over other commonly available amplifier solutions. Additionally, the amplifier meets error vector measurement (EVM) and spectral mask requirements for mobile infrastructure requirements, such as WiBro, WiMAX and 3G LTE.

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