RFMD Supplies EDGE Power Amplifier to Samsung for EDGE Slider Phones

(Business News & Technology News, 21 May 2007)

RF Micro Devices Inc.'s RF3159 quad-band linear EDGE power amplifier (PA) module is supporting Samsung's E250 EDGE handset. The RF3159 is a high linearity quad-band GSM/GPRS/EDGE PA designed to support EDGE transceivers utilizing a linear transmit architecture, including transceivers by NXP Semiconductors and Infineon Technologies. Designed to be the final amplification stage in a dual-mode GSM/GPRS/EDGE mobile transmit lineup, the product's gain and linearity lineups enable handset manufacturers to optimize the transmit chain to meet varying implementations of linearity, efficiency and output power. Fully quad-band capable, the RF3159 operates in the 824MHz to 915MHz and 1710MHz to 1910MHz bands.

"We are very pleased that Samsung has selected the RF3159 to power the highly popular and stylish E250 handset," said Konrad Alvarino, general manager, components business unit at RFMD. "Top tier handset manufacturers such as Samsung continue to select our linear EDGE power amplifiers as a result of their superior efficiency and linearity performance. We look forward to supporting Samsung with our industry-leading EDGE power amplifiers in future EDGE and 3G multimode handsets."

RFMD