Sirenza Microdevices Announces 3 Watt LDMOS Transistor

(Product News, 14 Sep 2006)

Sirenza Microdevices has announced its plastic encapsulated surface mount packaged Laterally Diffused Metal Oxide Semiconductor (LDMOS) transistor. The SLD-1026Z is housed in Sirenza's low thermal resistance SOF-26 package, offering versatility and high performance from 10 - 2700 MHz. Housed in RoHS/WEEE compliant plastic encapsulated surface mount package, SLD-1026Z Laterally Diffused Metal Oxide Semiconductor (LDMOS) transistor offers performance from 10-2,700 MHz. Transistor operates from 28 V, 50 mA current, and provides 19 dB gain, 35% drain efficiency, and -28 dBc 3rd order intermodulation products at 3 W output power. Product is suited for driver and power amplifiers in wireless base station, RFID, and radio applications.

The SLD-1026Z is available for immediate shipment in a RoHS/WEEE compliant proprietary plastic SOF-26 package. Samples and application design support are available by contacting Sirenza at

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