Discrete Transistors for WiMax Basestations

( 1 Jul 2006 )

M/A-COM, a business unit of Tyco Electronics, has launched two GaAs transistors suited for WiMAX basestations and customer premise equipment (CPE) applications up to 3.8GHz. Both are 12V GaAs pseudomorphic high electron mobility transistors (PHEMT) that provide RF power levels of 5 and 10W, respectively. The MAAP-003438-005PP0 is also suited for multi-channel multipoint distribution system (MMDS), wireless local loop (WLL) or wideband code division multiple access (WCDMA) driver applications from 2.1GHz, providing 5W (P1db), ACPR -40dBc at +27dBm P_out (W-CDMA). It has a typical of 10dB gain with lead free 3mm PQFN 16 lead surface mount packaging. The MAAP- 003438-010PP0 is also suited for MMDS, WLL or WCDMA driver applications from 2.1GHz. In contrast to the MAAP-003438-005PP0, this amplifier provides 10W (P1db) and -40dBc at +30dBm Pout (W-CDMA). It has a typical gain of 9.5dB in a lead free 4mm PQFN 16 lead surface mount package. M/A-COM