Freescale Achieves Breakthrough in Plastic Packaging for High-power RF Transistors

(Product News, 20 Jun 2006)

Freescale Semiconductor has introduced its 2 GHz high-power RF transistors housed in over-molded plastic packages that deliver performance comparable to air-cavity flange packages. The advanced devices will be based on the company's high-voltage, seventh-generation (HV7) RF Laterally Diffused Metal Oxide Semiconductor (LDMOS) technology. This advanced RF technology is designed to give designers of cellular infrastructure the ability to significantly reduce the cost of base station amplifiers, which are the expensive elements of wireless systems, while maintaining the stringent performance requirements.

Freescale's flagship HV7 device is the MRF7S19120N available in a TO-270 WBL-4 package. The MRF7S19120N delivers a minimum of 120 W P1dB and 36 W average with typical performance anticipated to be 18 dB gain, 32 percent efficiency and -37.5 dBc linearity at PAR=6.1dB (tested with single-carrier W-CDMA signal with PAR=7.5dB @ 0.01 percent probability on CCDF). A corresponding family of 2.1GHz products is planned to be released in Q3 2006.

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