M/A-COM announces three additions to its existing line of packageless Surmount PIN diodes. The MA4SPS421, MA4SPS422 series devices and MA4PD-042005 series diodes provide good power performance for future platform mobile radio and military control circuit switch and attenuator applications for the 1 MHz to 18 GHz operating range. The MA4SPS42x and MA4PD-042005 series devices feature the standard “0402” (40 x 20 mils sq.) style footprint. The products are manufactured using a “Vertical Etch Technology,” which provides lower parasitic CP and LS, while improving the device heat transfer through the silicon cylinder. The MA4SPS42x, 100 μm I-region series, offers high peak power (500 W, 1 μS pulse width, 0.001 duty cycle) and high average power (10W) performance, where the 5 μm I-region MA4PD-042005 series offers 50W peak power, 1 μS pulse width, 0.001 duty cycle and up to 25W average power performance. Both series are manufactured using M/A-COM’s proprietary HMIC silicon glass process. M/A-COM