Vishay Siliconix 20V P-Channel TrenchFET Gen III Power MOSFET Offers ‘Lowest’ On-Resistance

(Product News, 23 Nov 2009)

Vishay Intertechnology Inc. has introduced a 20V p-channel power MOSFET with the lowest on-resistance ever achieved for a p-channel device in the compact 2mm by 2mm footprint area of the thermally enhanced PowerPAK SC-70. The SiA433EDJ is the newest product built on TrenchFET Gen III p-channel technology, which uses self-aligning process techniques to pack one billion transistor cells into each square inch of silicon. This technology allows a superfine, sub-micron pitch process that cuts the industry's best on-resistance for a p-channel MOSFET nearly in half.

The SiA433EDJ offers an ultra-low on-resistance of 18mΩ at 4.5V, 26mΩ at 2.5V, and 65mΩ at 1.8V. These values are 40% lower at 4.5V and 30% lower at 2.5V than the closest competing p-channel device.
The MOSFET is also the only 20V device with both a gate-source voltage of 12V and an on-resistance rating at 1.8V. This allows it to be used in applications that encounter higher gate-drive voltage variation due to surges, spikes, noise, or overvoltages, while providing safer designs in applications with smaller input voltages.

The SiA433EDJ will be used as load, battery, and charging switches in handheld devices such as cellphones, smart phones, PDAs, and MP3 players. The low on-resistance of the MOSFET translates into lower conduction losses, saving power and prolonging battery life between charges in these devices. At half the size of the TSOP-6, and offering similar on-resistance, the SiA433EDJ's compact PowerPAK SC-70 package saves space for other product features or to enable smaller end products.

To reduce field failures due to ESD, the device features a built-in Zener diode for ESD protection up to 1,800V. The MOSFET is halogen free in accordance with IEC 61249-2-21, compliant to RoHS Directive 2002/95/EC, and 100 % Rg-tested.