Vishay Siliconix 30V P-Channel TrenchFET Gen III Power MOSFET Sets New ‘Industry First’ With 2.6mΩ Maximum On-Resistance in SO-8 Footprint Area

(Product News, 1 Jul 2009)

Vishay Intertechnology Inc. has released the “industry's first” 30V p-channel power MOSFET in the SO-8 footprint area to boast maximum on-resistance down to 2.6mΩ at a 10V gate drive and 3.75mΩ at 4.5V. With these specifications, the Vishay Siliconix Si7145DP, latest member of the TrenchFET Gen III p-channel family, achieves the lowest on-resistance ever for this voltage rating and footprint.

Packaged in the PowerPAK SO-8, the Si7145DP will be used as the adaptor switch and for load switching applications in notebook computers and industrial/general systems. Its low on-resistance translates into lower conduction losses, allowing the Si7145DP to do a better job of saving power and prolonging battery life between charges. This capability is especially important in adaptor switches (switching between the adaptor/wall power or the battery power), which are always on and drawing current.

The next-best 30V p-channel device in the SO-8 footprint available from a competitor features maximum on-resistance of 3.1mΩ at a 10V and 4.3mΩ at 4.5V, meaning 16 percent and 13 percent higher than the Si7145DP.

The device is 100 % Rg- and UIS-tested and halogen-free.